The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Dec. 28, 2017
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Pao-Ju Hsieh, Zhudong Township, TW;
Mei-Chih Peng, Taoyuan, TW;
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/13363 (2006.01); G02F 1/1335 (2006.01); G02B 5/30 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133636 (2013.01); G02B 5/3025 (2013.01); G02B 5/3083 (2013.01); G02F 1/13363 (2013.01); G02F 1/133528 (2013.01);
Abstract
A wideband compensation stack film comprises a chiral-half-wave compensation film and a chiral-quarter-wave compensation film. The chiral-quarter-wave compensation film is directly in contact with the chiral half-wave compensation film. Along the contact surface, the first layer liquid crystal molecule of the chiral-quarter-wave compensation film is arranged in the last layer of liquid crystal molecule of the chiral-half-wave compensation film. The retardation values (R) and the optical axis (Z) of the stack films follow a linear relationship: R=aZ+b.