The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Oct. 29, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robert A. Groves, Highland, NY (US);

Ning Lu, Essex Junction, VT (US);

Christopher S. Putnam, Hinesburg, VT (US);

Eric Thompson, Burlington, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/28 (2006.01); G01R 23/20 (2006.01); G01R 35/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 27/28 (2013.01); G01R 23/20 (2013.01); H01L 22/34 (2013.01); G01R 35/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.


Find Patent Forward Citations

Loading…