The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Sep. 19, 2017
Applicant:
Frank Asbeck, Bonn, DE;
Inventor:
Frank Asbeck, Bonn, DE;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0288 (2006.01); H01L 31/05 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); C30B 35/00 (2006.01); C30B 11/02 (2006.01); C30B 15/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 35/007 (2013.01); C30B 11/02 (2013.01); C30B 15/00 (2013.01); C30B 29/06 (2013.01); H01L 21/02576 (2013.01); H01L 31/0288 (2013.01); H01L 31/05 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01);
Abstract
A method for depositing silicon feedstock material may include introducing a first gas including silicon into a reactor chamber and introducing a second gas including at least one of gallium or indium into the reactor chamber and depositing silicon doped with at least one of gallium or indium onto a surface within the reactor chamber. Doped silicon feedstock material may be obtained by the method may be used for obtaining a silicon wafer, a solar cell, and/or a PV module.