The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jan. 19, 2018
Applicant:
The United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Inventors:
Vivek H Dwivedi, Glenn Dale, MD (US);
Mark M. Hasegawa, Highland, MD (US);
Assignee:
United States of America as represented by the Adminstrator of NASA, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
C01G 19/02 (2006.01); C01G 25/02 (2006.01); C09C 1/00 (2006.01); C09C 3/06 (2006.01);
U.S. Cl.
CPC ...
C01G 25/02 (2013.01); C01G 19/02 (2013.01); C09C 1/0015 (2013.01); C09C 3/063 (2013.01); C09C 2220/20 (2013.01);
Abstract
A method of producing a modification of pigments using atomic layer deposition (ALD) in varying electrical resistivity. More specifically, ALD may be used to encapsulate pigment particles with controlled thicknesses of a conductive layer, such as indium tin oxide (ITO). ALD may allow films to be theoretically grown one atom at a time, providing angstrom-level thickness control.