The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Jan. 30, 2015
Applicant:
Cellnovo Ltd, Swansea, GB;
Inventors:
Assignee:
CELLNOVO LIMITED, Swansea, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61M 5/142 (2006.01); F04B 43/04 (2006.01); F04B 43/06 (2006.01); F04B 49/06 (2006.01); F03G 7/06 (2006.01); A61M 5/162 (2006.01); A61M 5/172 (2006.01);
U.S. Cl.
CPC ...
A61M 5/142 (2013.01); A61M 5/14224 (2013.01); A61M 5/14244 (2013.01); A61M 5/162 (2013.01); A61M 5/1723 (2013.01); F03G 7/06 (2013.01); F04B 43/043 (2013.01); F04B 43/06 (2013.01); F04B 49/065 (2013.01); A61M 2205/3337 (2013.01); A61M 2205/3368 (2013.01); A61M 2205/3569 (2013.01); A61M 2205/3584 (2013.01); A61M 2205/3673 (2013.01); A61M 2205/505 (2013.01); A61M 2205/8206 (2013.01); A61M 2205/8237 (2013.01); A61M 2209/086 (2013.01); A61M 2230/005 (2013.01); A61M 2230/201 (2013.01); A61M 2230/63 (2013.01);
Abstract
An actuator comprises: a cavity containing a working medium (B) that reversibly expands as it undergoes a phase change from a solid to a liquid state; a diaphragm disposed adjacent the cavity such that expansion and contraction of the expandable working medium (B) causes the diaphragm to deflect, and a semiconductor element (A) disposed in the cavity. The semiconductor element (A) is operable in a first mode to heat the working medium (B) to cause it to undergo the phase change into the liquid state, and is operable in a second mode to measure the temperature at the semiconductor element (A). The corresponding actuation method is also disclosed.