The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Feb. 01, 2018
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Tsung Nan Lo, Kaohsiung, TW;

Chung Hsiung Ho, Kaohsiung, TW;

Assignee:

NXP B.V., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 20/00 (2006.01); H05K 3/34 (2006.01); H05K 1/11 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); B23K 20/02 (2006.01); B23K 101/36 (2006.01);
U.S. Cl.
CPC ...
H05K 3/3421 (2013.01); B23K 20/02 (2013.01); H01L 23/49816 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H05K 1/111 (2013.01); B23K 2101/36 (2018.08); H05K 2201/10636 (2013.01); H05K 2201/10689 (2013.01);
Abstract

In a die-substrate assembly, a copper inter-component joint is formed by bonding corresponding copper interconnect structures together directly, without using solder. The copper interconnect structures have distal layers of (111) crystalline copper that enable them to bond together at a relatively low temperature (e.g., below 300° C.) compared to the relatively high melting point (about 1085° C.) for the bulk copper of the rest of the interconnect structures. By avoiding the use of solder, the resulting inter-component joint will not suffer from the adverse IMC/EM effects of conventional, solder-based joints. The distal surfaces of the interconnect structures may be curved (e.g., one concave and the other convex) to facilitate mating the two structures and improve the reliability of the physical contact between the two interconnect structures. The bonding may be achieved using directed microwave radiation and microwave-sensitive flux, instead of uniform heating.


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