The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Feb. 10, 2017
Applicant:

GE Energy Power Conversion Technology Ltd, Rugby, Warwickshire, GB;

Inventors:

Roland Jakob, Berlin, DE;

Martin Geske, Berlin, DE;

Kowalsky Jens, Saxony, DE;

Josef Lutz, v, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 5/293 (2006.01); H03K 17/06 (2006.01); H03K 17/12 (2006.01); H02M 1/088 (2006.01); H02M 1/32 (2007.01); H02J 3/36 (2006.01); H02H 7/12 (2006.01); H02J 3/38 (2006.01);
U.S. Cl.
CPC ...
H02M 5/293 (2013.01); H02H 7/1213 (2013.01); H02J 3/36 (2013.01); H02M 1/08 (2013.01); H02M 1/088 (2013.01); H02M 1/32 (2013.01); H03K 17/06 (2013.01); H03K 17/127 (2013.01); H02J 3/386 (2013.01); H02M 2005/2932 (2013.01); H03K 2017/066 (2013.01);
Abstract

A device () for the on-demand commutation of an electrical current from a first line branch () to another, second line branch () is created, which has a number of power semiconductor switching elements (), which are arranged in series and/or parallel to one another in the second line branch (), and a control unit () for controlling the number of power semiconductor switching elements (). The control unit () is adapted to apply to each of the number of power semiconductor switching elements () an increased control voltage (VGE) whose level is above the maximum permissible control voltage specified for continuous operation, in order to switch on or maintain the conduction of the number of power semiconductor switching elements and to cause an increased current flow through it, whose current rating is at least double the nominal operating current. The control unit () is further adapted to switch off the number of power semiconductor switching elements after a respectively provided short switch-on duration by switching off the control voltage (VGE) again while they conduct an increased current flow. The device () can thus be designed for a higher power in operation, or, at a given operating power, the semiconductor area and size of the device () can be reduced.


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