The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Sep. 29, 2018
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Satoshi Komada, Sakai, JP;
Yuhzoh Tsuda, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/22 (2013.01); H01S 2304/04 (2013.01);
Abstract
A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.