The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Aug. 07, 2015
Applicants:

Basf SE, Ludwigshafen, DE;

The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);

Inventors:

Zhenan Bao, Stanford, CA (US);

Ting Lei, Palo Alto, CA (US);

Ying-Chih Lai, Taipeh, TW;

Huiliang Wang, Mountain View, CA (US);

Pascal Hayoz, Hofstetten, CH;

Thomas Weitz, Ottobrunn, DE;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01B 1/04 (2006.01); C08G 61/12 (2006.01); C01B 32/172 (2017.01); C01B 32/174 (2017.01); C08K 3/04 (2006.01); B82Y 40/00 (2011.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0048 (2013.01); C01B 32/172 (2017.08); C01B 32/174 (2017.08); C08G 61/124 (2013.01); C08G 61/126 (2013.01); C08K 3/041 (2017.05); H01B 1/04 (2013.01); H01L 51/0007 (2013.01); H01L 51/0036 (2013.01); H01L 51/0043 (2013.01); B82Y 40/00 (2013.01); C08G 2261/122 (2013.01); C08G 2261/124 (2013.01); C08G 2261/1412 (2013.01); C08G 2261/18 (2013.01); C08G 2261/228 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/334 (2013.01); C08G 2261/344 (2013.01); C08G 2261/411 (2013.01); C08G 2261/92 (2013.01); H01L 51/0558 (2013.01);
Abstract

Provided is a process for preparing a composition comprising semiconducting single-walled carbon nanotubes, a semiconducting polymer and solvent A (composition A), which process comprises the step of separating composition A from a composition comprising semiconducting and metallic single-walled carbon nanotubes, the semiconducting polymer and solvent B (composition B), wherein the semiconducting polymer has a band gap in the range of 0.5 to 1.8 eV and solvent A and B comprise an aromatic or a heteroaromatic solvent, composition A itself, a process for forming an electronic device, which process comprises the step of forming a layer by applying composition A to a precursor of the electronic device, as well as the electronic device obtainable by this process.


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