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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388857 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Jun. 16, 2016

Spin torque mram fabrication using negative tone lithography and ion beam etching

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony J. Annunziata, Stamford, CT (US);

Armand A. Galan, New York, NY (US);

Steve Holmes, Ossining, NY (US);

Eric A. Joseph, White Plains, NY (US);

Gen P. Lauer, Yorktown Heights, NY (US);

Qinghuang Lin, Yorktown Heights, NY (US);

Nathan P. Marchack, White Plains, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Robert G Bachner

Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01); G03F 7/20 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); G03F 7/70325 (2013.01); G03F 7/70425 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G11C 2211/5615 (2013.01); H01L 27/222 (2013.01);
Abstract

A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Find Patent Forward Citations

Annunziata, Anthony. (2019). Spin torque mram fabrication using negative tone lithography and ion beam etching (U.S. Patent No. 10388857). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10388857

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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