The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jul. 19, 2018
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Daigo Sawaki, Kanagawa, JP;

Takami Arakawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); H01L 41/187 (2006.01); C23C 14/08 (2006.01); H01L 41/09 (2006.01); H01L 41/316 (2013.01); H01L 41/08 (2006.01); C23C 14/00 (2006.01);
U.S. Cl.
CPC ...
H01L 41/1876 (2013.01); C23C 14/0068 (2013.01); C23C 14/08 (2013.01); C23C 14/088 (2013.01); H01L 41/0805 (2013.01); H01L 41/09 (2013.01); H01L 41/187 (2013.01); H01L 41/316 (2013.01);
Abstract

A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrTi)Nb]O, where x satisfies 0<x<1 and y satisfies 0.10≤y<0.13, I/I, which is a ratio between a diffraction peak intensity Ifrom the perovskite plane and a diffraction peak intensity Ifrom a perovskite plane as measured by X-ray diffraction method, satisfies 0.85≤I/I≤1.00, and the adhesion layer contains a metal having an ionization energy of 0.34 eV or less.


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