Nitride semiconductor wafer, manufacturing method thereof, nitride semiconductor ultraviolet light-emitting element, and nitride semiconductor ultraviolet light-emitting device

Abstract

To prevent degradation of electrical characteristics caused by a resin filled between electrodes in an ultraviolet light-emitting operation, there is provided a nitride semiconductor wafer having ultraviolet light-emitting elements on a substrate, each element including a semiconductor laminated portionconstituted by an n-type AlGaN layer, an active layercomposed of an AlGaN layer, and p-type AlGaN layersand, an n-electrode, a p-electrode, a protective insulating film, first and second plated electrodesand, and a fluororesin film. The p-electrode is formed on an upper surface of the p-type AlGaN layer in the first region Rand the n-electrode is formed on an upper surface of the n-type AlGaN layer in the second region R. The protective insulating film has openings for exposing at least parts of the n-electrode and the p-electrode. The first plated electrode is spaced apart from the second plated electrode, contacts the p-electrode, and covers an upper surface and an entire outer circumferential side surface of the first region Rand a part of the second region Rthat contacts the first region R. The second plated electrode contacts the n-electrode and the fluororesin filmcovers side wall surfaces of the first and second plated electrodes and a bottom surface of a gap part