The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Apr. 13, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Adam Bauer, Donaustauf, DE;

Andreas Loeffler, Neutraubling, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 33/06 (2013.01); H01L 33/502 (2013.01); H01L 33/04 (2013.01);
Abstract

The invention describes a radiation-emitting semiconductor component () having a first semiconductor layer sequence () which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (), a first electrode area () and a second electrode area (). It is provided that the second semiconductor layer sequence () has a quantum pot structure () with a quantum layer structure () and a barrier layer structure () and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence () by the first electrode area () and the second electrode area ().


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