The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

May. 04, 2018
Applicant:

Kaneka Corporation, Osaka, JP;

Inventors:

Daisuke Adachi, Osaka, JP;

Toru Terashita, Osaka, JP;

Toshihiko Uto, Osaka, JP;

Assignee:

KANEKA CORPORATION, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/288 (2006.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/0236 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1884 (2013.01); H01L 21/288 (2013.01); H01L 31/0224 (2013.01); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/022475 (2013.01); H01L 31/0747 (2013.01); H01L 31/202 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.


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