The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Aug. 16, 2018
Applicant:

Azur Space Solar Power Gmbh, Heilbronn, DE;

Inventors:

Daniel Fuhrmann, Heilbronn, DE;

Thomas Lauermann, Neuenstein, DE;

Gregor Keller, Heilbronn, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/167 (2006.01); H01L 27/06 (2006.01); H01L 27/144 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/167 (2013.01); H01L 27/0629 (2013.01); H01L 27/1443 (2013.01); H01L 31/0304 (2013.01);
Abstract

A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.


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