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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388818 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Jun. 16, 2017

Semiconductor detector

Applicant:

Nuctech Company Limited, Beijing, CN;

Inventors:

Lan Zhang, Beijing, CN;

Yingshuai Du, Beijing, CN;

Bo Li, Beijing, CN;

Zonggui Wu, Beijing, CN;

Jun Li, Beijing, CN;

Xuepeng Cao, Beijing, CN;

Haifan Hu, Beijing, CN;

Jianping Gu, Beijing, CN;

Guangming Xu, Beijing, CN;

Bicheng Liu, Beijing, CN;

Assignee:

NUCTECH COMPANY LIMITED, Beijing, CN;

Attorney:

BakerHostetler

Primary Examiner:

Bryan R Junge

Int. Cl.
CPC ...
H01L 31/118 (2006.01); G01T 1/24 (2006.01); G01T 1/02 (2006.01); H01L 27/144 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/032 (2006.01);
U.S. Cl.
CPC ...
H01L 31/118 (2013.01); G01T 1/026 (2013.01); G01T 1/241 (2013.01); H01L 27/1446 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/02966 (2013.01); H01L 31/022408 (2013.01); H01L 31/022416 (2013.01); H01L 31/032 (2013.01); H01L 31/0304 (2013.01);
Abstract

There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

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