The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

May. 27, 2016
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Indo Chung, Seoul, KR;

Juhong Yang, Seoul, KR;

Eunjoo Lee, Seoul, KR;

Mihee Heo, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/02167 (2013.01); H01L 31/0682 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.


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