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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388799 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Feb. 28, 2017

Semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Atsuo Isobe, Isehara, JP;

Toshinari Sasaki, Tochigi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 27/105 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 27/1156 (2017.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 23/564 (2013.01); H01L 27/1052 (2013.01); H01L 27/1156 (2013.01); H01L 27/1225 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/4236 (2013.01); H01L 29/42384 (2013.01); H01L 29/51 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Stable electric characteristics and high reliability are provided to a miniaturized and integrated semiconductor device including an oxide semiconductor. In a transistor (a semiconductor device) including an oxide semiconductor film, the oxide semiconductor film is provided along a trench (groove) formed in an insulating layer. The trench includes a lower end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the lower end corner portion.

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