The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Dec. 01, 2017
Thin film transistor, display device, transistor circuit, and driving method of thin film transistor
Tianma Japan, Ltd., Kawasaki, Kanagawa, JP;
Kazushige Takechi, Kawasaki, JP;
TIANMA JAPAN, LTD., Kawasaki, Kanagawa, JP;
Abstract
The oxide semiconductor thin film transistor includes a source electrode and a drain electrode; a channel layer formed of an oxide semiconductor; a first insulating film; a first gate electrode formed on a surface side opposing a first channel region which is formed on an interface between the channel layer and the first insulating film; a second insulating film; and a second gate electrode formed on a surface side opposing a second channel region which is formed on an interface between the channel layer and the second insulating film, and in a case where a length of an apposition direction of the source electrode and the drain electrode in the first channel region is set to a first channel length, and a length of a apposition direction in the second channel region is set to a second channel length, the second channel length is shorter than the first channel length, and a potential applied to the second gate electrode is greater than or equal to a lower potential of potentials of the source electrode and the drain electrode.