The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jan. 03, 2018
SK Hynix Inc., Icheon-si, KR;
Sanghun Lee, Icheon-si, KR;
Yong Soo Choi, Seongnam-si, KR;
SK hynix Inc., Icheon-si, KR;
Abstract
A ferroelectric memory device is disclosed. The ferroelectric memory device includes a substrate, an indium-gallium-zinc oxide layer disposed on the substrate, a ferroelectric material layer disposed on the indium-gallium-zinc oxide layer, a gate electrode layer disposed on the ferroelectric material layer, and a source electrode layer and a drain electrode layer that are disposed the ends of the gate electrode. The indium-gallium-zinc oxide layer is recessed to form a trench at the ends of the gate electrode. The trench is filled with a conductive material to form the source electrode layer and the drain electrode layer.