The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Dec. 17, 2014
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Giuseppe Bernacchia, Villach, AT;

Riccardo Pittassi, Villach, AT;

Oliver Blank, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/41741 (2013.01); H01L 29/7815 (2013.01); G01R 19/0092 (2013.01); H01L 29/407 (2013.01);
Abstract

A semiconductor device includes a main transistor and a sense transistor. The main transistor is disposed in a semiconductor body and includes a plurality of sections which are individually controllable via separate gate electrodes disposed above the semiconductor body. The sense transistor is disposed in the same semiconductor body as the main transistor and has the same number of individually controllable sections as the main transistor. Each individually controllable section of the sense transistor is configured to mirror current flowing through one of the individually controllable sections of the main transistor and is connected to the same gate electrode as that individually controllable section of the main transistor. An electronic circuit that includes the semiconductor device and a current sense circuit that outputs a current sense signal representing the current mirrored by the sense transistor is also provided.


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