The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Oct. 27, 2017
The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, CN;
Jingjing Wang, Shijiazhuang, CN;
Zhihong Feng, Shijiazhuang, CN;
Cui Yu, Shijiazhuang, CN;
Chuangjie Zhou, Shijiazhuang, CN;
Qingbin Liu, Shijiazhuang, CN;
Zezhao He, Shijiazhuang, CN;
Abstract
The present application discloses a semiconductor device and a method for forming an n-type conductive channel in a diamond using a heterojunction, which pertain to the technical field of fabrication of semiconductor devices. The method comprises: forming a diamond layer on a substrate; and depositing a ternary compound having a donor characteristic and graded components on an upper surface of the diamond layer to form a first donor layer, forming a graded heterojunction at an interface between the diamond layer and the first donor layer, forming two-dimensional electron gas at one side of the diamond layer adjacent to the graded heterojunction, and using the two-dimensional electron gas as the n-type conductive channel. The method enables a concentration and a mobility of carriers in the n-type diamond channel to reach 1013 cmand 2000 cm/V·s respectively.