The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jun. 29, 2018
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Taketoshi Tanaka, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 29/1054 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/4232 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/872 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2224/73265 (2013.01);
Abstract
A nitride semiconductor device includes a silicon substrate. A nitride semiconductor layer is formed over the silicon substrate. A gate electrode is formed over the nitride semiconductor layer so as to have a first ring-shaped portion and a second ring-shaped portion connected to the first ring-shaped portion. A first finger electrode is surrounded by the first ring-shaped portion. A second finger electrode is surrounded by the second ring-shaped portion. A third finger electrode is interposed between the first ring-shaped portion and the second ring-shaped portion.