The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Aug. 08, 2018
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

HeeSung Lee, Incheon, KR;

Seoyeon Im, Paju-si, KR;

Kwon-Shik Park, Seoul, KR;

SungKi Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/267 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78681 (2013.01); G02F 1/1368 (2013.01); G02F 1/133305 (2013.01); H01L 27/3244 (2013.01); H01L 51/0097 (2013.01);
Abstract

The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.


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