The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jan. 24, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Kazuya Yamaguchi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device including an active region for main current thereof to flow therein and an edge termination region surrounding the active region. The semiconductor device includes a substrate, a drift layer provided on a first main surface of the substrate, a semiconductor layer provided in a surface layer of the drift layer, a trench formed in the active region and reaching the drift layer from a surface of the semiconductor layer, a gate electrode provided in the trench via a gate insulating film, a gate metal formed in the edge termination region and connected with the gate electrode, a gate contact formed in the edge termination region, and having a top thereof in contact with the gate metal, and a semiconductor region that is provided in the surface layer of the drift layer, extends from the active region to the edge termination region, and is connected with the semiconductor layer and a bottom of the gate contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile