The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jan. 11, 2019
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;

Inventor:

Zhiwu Wang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1333 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1274 (2013.01); G02F 1/133345 (2013.01); G02F 1/136209 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78693 (2013.01); G02F 1/1368 (2013.01); G02F 2202/10 (2013.01);
Abstract

An array substrate includes a substrate, a gate electrode, a gate insulating layer and an active layer formed in sequence in a stack. The active layer includes a source transfer portion and a drain transfer portion separated from the source transfer portion and a channel integrally connected to the source transfer portion and the drain transfer portion. Contact resistances between the source transfer portion, the drain transfer portion and the channel are reduced, and interface defects of the channel are reduced, so that through the source transfer portion and the drain transfer portion, an on-state current of a thin film transistor is increased and an off-state current is reduced so that is the on/off ratio is raised to improve the performance of the array substrate.


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