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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388663 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Jan. 24, 2018

Wiring line structure of three-dimensional memory device

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Sung-Lae Oh, Chungcheongbuk-do, KR;

Dong-Hyuk Kim, Seoul, KR;

Soo-Nam Jung, Seoul, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

J H Hur

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 23/528 (2006.01); G11C 16/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 27/11521 (2017.01); H01L 27/11526 (2017.01); H01L 27/11556 (2017.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01); H01L 27/11565 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 23/528 (2013.01); H01L 27/11521 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 27/11519 (2013.01); H01L 27/11565 (2013.01);
Abstract

A memory device includes a substrate, channel structures disposed over the substrate and extending in a first direction perpendicular to a top surface of the substrate, a plurality of gate lines surrounding the channel structures and stacked over the substrate along the first direction, and a wiring line disposed at the same layer as at least one of the gate lines.

Find Patent Forward Citations

Oh, Sung-Lae. (2019). Wiring line structure of three-dimensional memory device (U.S. Patent No. 10388663). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10388663

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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