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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10388653 B1

PDFFull Text
Expired
Date of Patent:
Aug. 20, 2019

Filed:

Aug. 11, 2016

Formation of ohmic contacts for a device provided with a region made of iii-v material and a region made of another semiconductor material

Applicants:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Philippe Rodriguez, Rives, FR;

Elodie Ghegin, Seyssinet-Pariset, FR;

Fabrice Nemouchi, Moirans, FR;

Assignees:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

STMicroelectronics (Crolles 2) SAS, Crolles, FR;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 21/8258 (2006.01); H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/161 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/02068 (2013.01); H01L 21/02532 (2013.01); H01L 21/02631 (2013.01); H01L 21/28518 (2013.01); H01L 21/324 (2013.01); H01L 21/76879 (2013.01); H01L 21/8258 (2013.01); H01L 21/823475 (2013.01); H01L 21/823871 (2013.01); H01L 29/161 (2013.01); H01L 29/45 (2013.01); H01L 29/66568 (2013.01); H01L 21/823814 (2013.01);
Abstract

A production of contact zones for a transistor device including the steps of:

Find Patent Forward Citations

Rodriguez, Philippe. (2019). Formation of ohmic contacts for a device provided with a region made of iii-v material and a region made of another semiconductor material (U.S. Patent No. 10388653). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10388653

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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