The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jun. 11, 2018
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Aki Dote, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/8238 (2006.01); H01L 29/04 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/823871 (2013.01); H01L 25/50 (2013.01); H01L 29/045 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06565 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/3511 (2013.01);
Abstract
A semiconductor device includes, a plurality of semiconductor dies formed using semiconductor substrates, plane orientations of which are the same, and the plurality of the semiconductor dies are stacked such that a crystal orientation of at least one layer is different from other layers.