The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Jul. 27, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 23/28 (2006.01); H01L 23/31 (2006.01); H01L 21/02 (2006.01); H01L 29/808 (2006.01); H01L 29/812 (2006.01); H01L 21/8252 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3192 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02183 (2013.01); H01L 21/02274 (2013.01); H01L 21/02301 (2013.01); H01L 29/42316 (2013.01); H01L 29/778 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 23/291 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate; a gate electrode on the semiconductor substrate; a SiN film on the semiconductor substrate and the gate electrode; and an oxide film on the SiN film, wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.