The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Aug. 03, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Rak Hwan Kim, Suwon-si, KR;
Byung Hee Kim, Seoul, KR;
Sang Bom Kang, Seoul, KR;
Jong Jin Lee, Seoul, KR;
Eun Ji Jung, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a lower layer, an upper layer on the lower layer, a contact between the lower layer and the upper layer, the contact electrically connects the lower layer and the upper layer, a capping pattern wrapping around the contact and covering an upper surface of the contact, a barrier layer wrapping around the capping pattern and covering a lower surface of the capping pattern and a lower surface of the contact, and an interlayer insulating layer between the lower layer and the upper layer, the interlayer insulating layer wrapping around the barrier layer and exposing an upper surface of the capping pattern, wherein the capping pattern includes a material having an etching selectivity with respect to an oxide.