The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jan. 04, 2019
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Arito Ogawa, Toyama, JP;

Kazuhiro Harada, Toyama, JP;

Yukinao Kaga, Toyama, JP;

Hideharu Itatani, Toyama, JP;

Hiroshi Ashihara, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 49/02 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/02 (2006.01); C23C 16/36 (2006.01); C23C 16/40 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/0272 (2013.01); C23C 16/36 (2013.01); C23C 16/402 (2013.01); C23C 16/405 (2013.01); C23C 16/4412 (2013.01); C23C 16/45523 (2013.01); C23C 16/45531 (2013.01); C23C 16/45561 (2013.01); C23C 16/45578 (2013.01); C23C 16/52 (2013.01); H01L 21/02181 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 27/1085 (2013.01); H01L 28/40 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28562 (2013.01); H01L 29/4966 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract

Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes: (a) forming a titanium nitride layer on a substrate by supplying a first source containing titanium and a second source containing nitrogen to the substrate; (b) forming a titanium aluminum carbonitride layer on the substrate by supplying the first source, the second source and a third source containing aluminum and carbon to the substrate; (c) forming a laminated film on the substrate by performing (a) and (b); and (d) adjusting ratios of titanium, nitrogen, aluminum and carbon in the laminated film based on how many times (a) and (b) are performed.


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