The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Oct. 11, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Lars Mueller-Meskamp, Dresden, DE;

Stefan Duenkel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 21/223 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02299 (2013.01); H01L 21/02172 (2013.01); H01L 21/2236 (2013.01); H01L 21/26506 (2013.01); H01L 21/76267 (2013.01); H01L 21/76283 (2013.01); H01L 29/0649 (2013.01); H01L 29/66477 (2013.01); H01L 29/7841 (2013.01);
Abstract

In semiconductor devices, high-k dielectric materials may be formed on the basis of engineered surface conditions, thereby contributing to superior uniformity of the resulting characteristics. In some illustrative embodiments, the dielectric material may be stabilized in a ferroelectric phase, wherein the previous surface modulation, which, in the illustrative embodiments may include the introduction of respective species, such as dopant species, thereby contributing to uniform ferroelectric characteristics. In some illustrative embodiments, the process strategy may be applied to a buried insulating layer of an SOI substrate.


Find Patent Forward Citations

Loading…