The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jul. 25, 2017
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Yonathan Tate, Kfar Saba, IL;

Tomer Ish-Shalom, Ra'anana, IL;

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/42 (2006.01); G06F 11/10 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G06F 11/1012 (2013.01); G06F 11/1076 (2013.01); G11C 29/44 (2013.01);
Abstract

A memory system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values. The storage circuitry is configured to read from a group of the memory cells a code word encoded using an Error Correction Code (ECC), by sensing the memory cells using at least first and second read thresholds for producing respective first and second readouts, to calculate, based on at least one of the first and second readouts, (i) a syndrome weight that is indicative of an actual number of errors contained in the code word, and (ii) a mid-zone count of the memory cells for which the first readout differs from the second readout, and, to evaluate a performance measure for the memory cells, based on the calculated syndrome weight and mid-zone count.


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