The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
Sep. 07, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Yusuke Umezawa, Yokohama, JP;
Shigeru Kinoshita, Yokohama, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
A semiconductor device includes first and second memory cells, a first word line, and a first and second bit lines, and a row control circuit. The first memory cell has a first gate electrode and a first channel having one end and another end. The second memory cell has a second gate electrode and a second channel having one end and another end. The first word line electrically connected with each of the first gate electrode and the second gate electrode. The first and second bit lines electrically connected with the first and second channels, respectively. When a threshold voltage of each of the first and second memory cells are caused to be shifted, the semiconductor device causes a first voltage between the first gate electrode and the first channel and a second voltage between the second gate electrode and the second channel to be differentiated.