The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jan. 26, 2016
Applicant:

Agency for Science, Technology and Research, Singapore, SG;

Inventors:

Hongxin Yang, Singapore, SG;

Minghua Li, Singapore, SG;

Wei He, Singapore, SG;

Yu Jiang, Singapore, SG;

Fei Li, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0021 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/145 (2013.01); G11C 2013/0052 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/15 (2013.01); G11C 2213/76 (2013.01); H01L 27/2418 (2013.01);
Abstract

Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching layer includes at least one metal rich layer and at least one chalcogenide rich layer. The metal rich layer includes at least one of a metal or a metal compound, wherein metal content of the metal rich layer is greater than 50 at. %. The chalcogenide content of the chalcogenide rich layer is greater than 50 at. %.


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