The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Sep. 12, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventor:

Naoki Shimizu, Kawasaki Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 29/06 (2006.01); G11C 29/14 (2006.01); G11C 29/46 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 11/1693 (2013.01); G11C 13/0069 (2013.01); G11C 29/06 (2013.01); G11C 29/14 (2013.01); G11C 29/46 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a first memory cell having a first variable resistance element, a second memory cell having a second variable resistance element, and a first circuit which controls writing to the first memory cell and the second memory cell. The first circuit receives a first command instructing writing to the first memory cell, after receiving the first command, receives a second command instructing writing to the second memory cell, and after receiving the second command, performs writing to the second memory cell when performing writing to the first memory cell.


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