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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10386684 B1

PDFFull Text
Date of Patent:
Aug. 20, 2019

Filed:

Dec. 14, 2015

Semiconductor device, display apparatus, and method of manufacturing semiconductor device

Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Kuniaki Okada, Sakai, JP;

Seiichi Uchida, Sakai, JP;

Naoki Ueda, Sakai, JP;

Sumio Katoh, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:

ScienBiziP, P.C.

Primary Examiner:

Hoan C Nguyen

Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01); G02F 1/1337 (2006.01); G02F 1/1343 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G02F 1/136227 (2013.01); G02F 1/1337 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/136286 (2013.01); H01L 21/02565 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); G02F 2001/136295 (2013.01); G02F 2201/40 (2013.01); G02F 2202/10 (2013.01);
Abstract

A semiconductor device (A) includes a thin film transistor (), an inter-layer insulation layer () covering the thin film transistor, and a transparent conductive layer () formed on the inter-layer insulation layer. The metal oxide layer () of the thin film transistor includes a first portion () overlapping the gate electrode () via a gate insulation layer () and a second portion () not overlapping the gate electrode (). The second portion () crosses a different edge (e) different from an edge (e) of the drain electrode () on a side of the first portion when viewed in the normal direction of the substrate (). The inter-layer insulation layer has a contact hole () disposed to overlap a part of the drain electrode () and at least a part of the second portion () of the metal oxide layer when viewed in the normal direction of the substrate. The transparent conductive layer () comes into contact with the drain electrode (), the second portion (), and the gate insulation layer () in the contact hole ().

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