The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Sep. 05, 2018
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Seungyong Jung, Paju-si, KR;

Hanseok Lee, Goyang-si, KR;

Hyungil Na, Seoul, KR;

JungJune Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/24 (2006.01); H01L 27/146 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2018 (2013.01); G01T 1/241 (2013.01); H01L 27/1218 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 27/14658 (2013.01); H01L 27/14663 (2013.01); H01L 27/14692 (2013.01);
Abstract

An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.


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