The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Jun. 25, 2015
Applicant:

Sharp Kabushiki Kaisha, Osaka, JP;

Inventors:

Kazuhide Tomiyasu, Osaka, JP;

Shigeyasu Mori, Osaka, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/24 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H04N 5/32 (2006.01); G01N 23/04 (2018.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); A61B 6/00 (2006.01);
U.S. Cl.
CPC ...
G01T 1/20 (2013.01); G01N 23/04 (2013.01); G01T 1/247 (2013.01); H01L 27/144 (2013.01); H01L 27/146 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14663 (2013.01); H01L 29/04 (2013.01); H01L 29/7869 (2013.01); H01L 31/10 (2013.01); H04N 5/32 (2013.01); A61B 6/4208 (2013.01);
Abstract

Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, and a thin film transistor connected to the gate line, data line, and conversion element. A drain electrode of the thin film transistor is formed such that edges of the drain electrode near the data line are more inside the pixel than edges of the conversion element near the data line.


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