The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Sep. 07, 2015
Applicant:

Sumitomo Chemical Company, Limited, Tokyo, JP;

Inventors:

Yasuhiro Yamashita, Tsukuba, JP;

Hideaki Nakajima, Ichihara, JP;

Yutaka Ito, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 3/42 (2006.01); C23C 16/32 (2006.01); G06F 1/16 (2006.01); B32B 27/08 (2006.01); H04M 1/02 (2006.01); B32B 9/00 (2006.01); C23C 16/509 (2006.01); C23C 16/50 (2006.01); C23C 16/40 (2006.01); C23C 16/54 (2006.01);
U.S. Cl.
CPC ...
C23C 16/32 (2013.01); B32B 9/00 (2013.01); B32B 27/08 (2013.01); C23C 16/401 (2013.01); C23C 16/50 (2013.01); C23C 16/509 (2013.01); C23C 16/545 (2013.01); G01J 3/42 (2013.01); G06F 1/1652 (2013.01); H04M 1/0268 (2013.01); B32B 2307/7242 (2013.01);
Abstract

The invention provides a gas barrier laminated film having high impact resistance when a heterolayer is formed on a thin film layer. The laminated film includes a flexible substrate and a thin film layer formed on at least one surface of the substrate, wherein the thin film layer contains Si, O, and C, and the ratio of the number of carbon atoms to the number of silicon atoms which is calculated using peaks each corresponding to each binding energy of 2p of Si, 1s of O, 1s of N, and 1s of C obtained from wide scan spectrums is in the range defined by the following formula (1) when the surface of the thin film layer is subjected to X-ray photoelectron spectrometry, and a intensity ratio of a peak intensity (I) at 1240 to 1290 cmto a peak intensity (I) at 950 to 1050 cmis in the range defined by the following formula (2) when the surface of the thin film layer is measured by an ATR method in infrared spectrometry:0.01<C/Si≤0.02  (1)0.01≤I/I<0.05  (2).


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