The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Dec. 17, 2009
Applicants:

Hong-xin LI, Lansdale, PA (US);

William E. Cormier, Harleysville, PA (US);

Bjorn Moden, Glen Mills, PA (US);

Inventors:

Hong-Xin Li, Lansdale, PA (US);

William E. Cormier, Harleysville, PA (US);

Bjorn Moden, Glen Mills, PA (US);

Assignee:

PQ Corporation, Valley Forge, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 29/06 (2006.01); B01D 53/94 (2006.01); B01J 37/10 (2006.01); B01J 37/02 (2006.01); B01J 29/70 (2006.01); B01J 29/76 (2006.01); B01J 29/85 (2006.01); B01J 35/00 (2006.01); B01J 35/02 (2006.01); B01J 35/10 (2006.01);
U.S. Cl.
CPC ...
B01D 53/9418 (2013.01); B01J 29/7015 (2013.01); B01J 29/763 (2013.01); B01J 29/85 (2013.01); B01J 35/002 (2013.01); B01J 35/023 (2013.01); B01J 35/1023 (2013.01); B01J 35/1038 (2013.01); B01J 37/0201 (2013.01); B01J 37/10 (2013.01); B01D 2251/2062 (2013.01); B01D 2251/2067 (2013.01); B01D 2255/20738 (2013.01); B01D 2255/20761 (2013.01); B01D 2255/50 (2013.01); B01D 2255/92 (2013.01); B01D 2255/9205 (2013.01); B01D 2255/9207 (2013.01); B01J 2229/18 (2013.01); B01J 2229/186 (2013.01);
Abstract

There is disclosed a microporous crystalline material comprising a metal containing chabazite having a crystal size greater than 0.5 microns and a silica-to-alumina ratio (SAR) greater than 15, wherein the metal containing chabazite retains at least 80% of its initial surface area and micropore volume after exposure to temperatures of up to 900° C. in the presence of up to 10 volume percent water vapor for up to 1 hour. Methods of using the disclosed crystalline material, such as in the SCR of NOin exhaust gas are also disclosed, as are methods of making such materials.


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