The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Jan. 04, 2017
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Atsushi Miki, Ibaraki, JP;

Ryo Fukuchi, Ibaraki, JP;

Hideta Arai, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/09 (2006.01); C22C 9/00 (2006.01); C22C 30/02 (2006.01); C25F 1/00 (2006.01); C25D 3/38 (2006.01); C25D 3/12 (2006.01); C25D 11/38 (2006.01); C25D 7/06 (2006.01); C22F 1/08 (2006.01); H05K 3/38 (2006.01); C25D 5/12 (2006.01); C25D 3/56 (2006.01); C25D 3/58 (2006.01);
U.S. Cl.
CPC ...
H05K 1/09 (2013.01); C22C 9/00 (2013.01); C22C 30/02 (2013.01); C22F 1/08 (2013.01); C25D 3/12 (2013.01); C25D 3/38 (2013.01); C25D 5/12 (2013.01); C25D 7/0614 (2013.01); C25D 11/38 (2013.01); C25F 1/00 (2013.01); H05K 3/382 (2013.01); C25D 3/562 (2013.01); C25D 3/565 (2013.01); C25D 3/58 (2013.01); H05K 3/389 (2013.01); H05K 2201/0355 (2013.01);
Abstract

To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiOconversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.


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