The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Nov. 22, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Guoan Zhong, San Diego, CA (US);

Junmou Zhang, San Diego, CA (US);

Nan Chen, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 19/21 (2006.01); H03K 3/03 (2006.01); G06F 1/324 (2019.01); G01R 19/252 (2006.01); G06F 1/32 (2019.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); G01R 19/252 (2013.01); G06F 1/32 (2013.01); G06F 1/324 (2013.01); H03K 3/0315 (2013.01); H03K 19/21 (2013.01);
Abstract

An apparatus for sensing distributed load currents provided by power gating circuit. The apparatus includes a power gating circuit including a set of bulk transistors coupled in series with a set of circuits between first and second voltage rails. The apparatus includes a current sensor with a first ring oscillator, a first frequency-to-code (FTC) converter, a second ring oscillator, a second FTC converter, and a subtractor. The first ring oscillator includes a first set of one or more inverters configured to receive a first voltage at a node between the power gating circuit and the first circuit, and a second set of one or more inverters configured to receive a second voltage at a second node between the power gating circuit and the second circuit. The first ring oscillator is configured to generate a signal including a frequency related to the voltage drops across the first and second sets of transistors.


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