The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Aug. 17, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Peking University, Beijing, CN;
Xuelei Liang, Beijing, CN;
Guanbao Hui, Beijing, CN;
Boyuan Tian, Beijing, CN;
Fangzhen Zhang, Beijing, CN;
Haiyan Zhao, Beijing, CN;
Jiye Xia, Beijing, CN;
Qiuping Yan, Beijing, CN;
Lianmao Peng, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The present disclosure provides a carbon nanotube thin film transistor (CNT-TFT) and its manufacturing method. The carbon nanotube thin film transistor includes a source electrode, a drain electrode, a channel region, a plurality of protrusions, and a carbon nanotube layer. The channel region is between the source electrode and the drain electrode. The plurality of protrusions are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions, and comprises a plurality of carbon nanotubes.