The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Dec. 05, 2013
Applicant:
Xerox Corporation, Norwalk, CT (US);
Inventors:
Assignee:
XEROX CORPORATION, Norwalk, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/05 (2006.01); H01L 51/42 (2006.01); G11C 13/04 (2006.01); G11C 13/00 (2006.01); H01L 51/00 (2006.01); H01L 27/28 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0508 (2013.01); G11C 13/0014 (2013.01); G11C 13/0016 (2013.01); G11C 13/04 (2013.01); G11C 13/047 (2013.01); H01L 51/0566 (2013.01); H01L 51/428 (2013.01); G11C 2213/53 (2013.01); H01L 27/283 (2013.01); H01L 51/004 (2013.01); H01L 51/0074 (2013.01); Y02E 10/549 (2013.01);
Abstract
An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a 'low' state by irradiation, and can be switched to a 'high' state by applying a gate bias voltage. This can be useful for a memory device.