The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Feb. 06, 2018
Applicant:
Arm Ltd., Cambridge, GB;
Inventors:
Kimberly Gay Reid, Austin, TX (US);
Lucian Shifren, San Jose, CA (US);
Assignee:
ARM Ltd., Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 49/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1266 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/08 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01); H01L 45/1641 (2013.01); H01L 49/003 (2013.01);
Abstract
Subject matter disclosed herein may relate to fabrication of layered correlated electron materials (CEMs) in which a first group of one or more layers may comprise a first concentration of a dopant species, and wherein a second group of one or more layers may comprise a second concentration of a dopant species. In other embodiments, a CEM may comprise one or more regions of graded concentration of a dopant species.