The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Jul. 19, 2016
Applicant:

Solaero Technologies Corp., Albuquerque, NM (US);

Inventors:

Pravin Patel, Albuquerque, NM (US);

Arthur Cornfeld, Sandy Springs, GA (US);

John Spann, Albuquerque, NM (US);

Mark A. Stan, Albuquerque, NM (US);

Benjamin Cho, Albuquerque, NM (US);

Paul R. Sharps, Albuquerque, NM (US);

Daniel J. Aiken, Cedar Crest, NM (US);

Assignee:

SolAero Technologies Corp., Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/0735 (2012.01); H01L 31/18 (2006.01); H01L 31/0687 (2012.01); H01L 31/0304 (2006.01); H01L 31/078 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1844 (2013.01); H01L 31/03046 (2013.01); H01L 31/06875 (2013.01); H01L 31/078 (2013.01); H01L 31/1892 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A multijunction solar cell includes an upper first solar subcell having a first band gap, a second solar subcell having a second band gap smaller than the first band gap, and a first graded interlayer composed of (InxGa1-x)yAl1-yAs adjacent to the second solar subcell. The first graded interlayer has a third band gap greater than the second band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second subcell and less than or equal to that of the third subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the first graded interlayer remains constant throughout its thickness at 1.5 eV. A third solar subcell is adjacent to the first graded interlayer and has a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer composed of (InxGa1-x)yAl1-yAs is adjacent to the third solar subcell and has a fifth band gap greater than the fourth band gap subject to the constraints of having the in-plane lattice parameter greater or equal to that of the third subcell and less than or equal to that of the bottom fourth subcell, wherein 0<x<1 and 0<y<1, and x and y are selected such that the band gap of the second graded interlayer remains constant throughout its thickness at 1.1 eV. A lower fourth solar subcell is adjacent to the second graded interlayer and has a sixth band gap smaller than the fourth band gap.


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