logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10381475 B1

PDFFull Text
Date of Patent:
Aug. 13, 2019

Filed:

Oct. 17, 2017

Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit

Applicant:

Infineon Technologies Dresden Gmbh, Dresden, DE;

Inventors:

Andreas Meiser, Sauerlach, DE;

Karl-Heinz Gebhardt, Dresden, DE;

Till Schloesser, München, DE;

Detlef Weber, Ottendorf-Okrilla, DE;

Assignee:

Infineon Technologies Dresden GmbH, , DE;

Attorney:

Design IP

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/223 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7825 (2013.01); H01L 21/2254 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1079 (2013.01); H01L 29/1083 (2013.01); H01L 29/1087 (2013.01); H01L 29/407 (2013.01); H01L 29/4175 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/66659 (2013.01); H01L 29/66696 (2013.01); H01L 29/66704 (2013.01); H01L 29/7821 (2013.01); H01L 29/7835 (2013.01); H01L 21/223 (2013.01); H01L 21/2236 (2013.01); H01L 21/2255 (2013.01); H01L 21/26586 (2013.01);
Abstract

A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Find Patent Forward Citations

Loading…