The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2019
Filed:
Oct. 20, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka, JP;
Abstract
In a nitride-semiconductor field-effect transistor, an end on a recess side of a first insulating film is separated by a distance from an opening edge of the recess and an end on a recess side of a second insulating film is separated by a distance from the end on the recess side of the first insulating film. A part of a drain electrode out of the recess stretches toward a gate electrode side in an eaves shape, is formed over surfaces of the nitride semiconductor laminate, the first insulating film, and the second insulating film from the recess, and contacts the surfaces of the nitride semiconductor laminate, the first insulating film, and the second insulating film.
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